CONDUCTION-BAND OFFSETS IN CDZNSSE ZNSSE SINGLE QUANTUM-WELLS MEASURED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/

Authors
BAUDE PF HAASE MA HAUGEN GM LAW KK MILLER TJ SMEKALIN K PHILLIPS J BHATTACHARYA P
Citation
Pf. Baude et al., CONDUCTION-BAND OFFSETS IN CDZNSSE ZNSSE SINGLE QUANTUM-WELLS MEASURED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Applied physics letters, 68(25), 1996, pp. 3591-3593
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
25
Year of publication
1996
Pages
3591 - 3593
Database
ISI
SICI code
0003-6951(1996)68:25<3591:COICZS>2.0.ZU;2-L
Abstract
Conduction-band offsets in wide-band-gap CdZnSSe/ZnSSe single quantum well structures have been characterized by deep level transient spectr oscopy (DLTS) measurements. 50 Angstrom thick Cd0.3Zn0.7S0.06Se0.94 si ngle quantum wells with ZnS0.06Se0.94 barriers were grown by molecular beam epitaxy on GaAs substrates. A thermal emission energy from the q uaternary wells of 179+/-10 meV was measured. This corresponds to a co nduction-band offset energy of similar to 251+/-20 meV. (C) 1996 Ameri can Institute of Physics.