A FERROELECTRIC TRANSPARENT THIN-FILM-TRANSISTOR

Operation is demonstrated of a field-effect transistor made of transpa rant oxidic thin films, showing an intrinsic memory function due to th e usage of a ferroelectric insulator. The device consists of a high mo bility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric insulator, and SrRuO3 as a gate electrode, each layer pr epared by pulsed laser deposition. The hysteresis behavior of the chan nel conductance is studied. Using gate voltage pulses of 100 mu s dura tion and a pulse height of +/-3 V, a change of a factor of two in the remnant conductance is achieved. The dependence of the conductance on the polarity of the gate pulse proves that the memory effect is driven by the ferroelectric polarization. The influence of charge trapping i s also observed and discussed. (C) 1996 American Institute of Physics.