Titanium nitride films may be deposited by filtered are deposition (FA
D) onto heated substrates or by ion assisted are deposition (IAAD) ont
o unheated substrates. The stress and microhardness of the deposited f
ilms are strongly dependent upon the bias applied to the substrate in
FAD. In the case of FAD onto substrates heated to 400 degrees C, an in
creasingly negative substrate bias results in a decrease in film compr
essive stress from 10 to 2 GPa. In the case of nitrogen IAAD onto ambi
ent temperature substrates, the film properties are influenced by the
nature of the assisting ion beam, specifically the energy and the rela
tive arrival ratio. The stress ranges from 1 to 7 GPa and the hardness
from 26 to 38 GPa. Pronounced effects are also observed-in the develo
pment of preferred orientation. When the assisting N ion energy is inc
reased from 500 to 1200 eV the orientation changes from (111) to (220)
. The stress evolution of the are deposited films may be qualitatively
understood in terms of the generalised model for momentum transfer, m
odified to account for the increased energy of the condensing particle
s generated by the are process.