Citation
Ia. Veloarisoa et al., GROUND-STATE ENERGY SHIFT OF ACCEPTOR-HYDROGEN COMPLEXES IN SI AND GAAS UNDER UNIAXIAL-STRESS, Physical review. B, Condensed matter, 47(24), 1993, pp. 16237-16241
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
01631829
Volume
47
Issue
24
Year of publication
1993
Pages
16237 - 16241
Database
ISI
SICI code
0163-1829(1993)47:24<16237:GESOAC>2.0.ZU;2-4
Abstract
Several low-symmetry, H-containing complexes in semiconductors can be
preferentially aligned by an applied stress Here, the coupling of the
ground-state energy to stress, i.e., the defect's piezospectroscopic t
ensor, has been determined for the acceptor-hydrogen complexes Si:B-H,
GaAs:Be(Ga)-H, and GaAs:C(As)-H.