BAND-EDGE STATES AND VALENCE-BAND OFFSET OF GAP INP STRAINED-LAYER SUPERLATTICES/

Authors
ARMELLES G MUNOZ MC ALONSO MI
Citation
G. Armelles et al., BAND-EDGE STATES AND VALENCE-BAND OFFSET OF GAP INP STRAINED-LAYER SUPERLATTICES/, Physical review. B, Condensed matter, 47(24), 1993, pp. 16299-16304
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
47
Issue
24
Year of publication
1993
Pages
16299 - 16304
Database
ISI
SICI code
0163-1829(1993)47:24<16299:BSAVOO>2.0.ZU;2-5
Abstract
A study of the optical properties of short-period GaP/InP(001) straine d-layer superlattices is presented. photoluminescence, photoreflectanc e, and resonant Raman spectroscopies have been used to determine both the interband transition energies and the spatial distribution of the electronic wave functions. Comparison of the experimental results to t hose of an empirical tight-binding calculation provides an overall pic ture of the superlattices's electronic structure, and gives an estimat e of the valence-band offset of about 0.6 eV.