Using an approximate solution of the Hubbard-model Hamiltonian, we are
able to establish that the Cs-GaAs(110) system becomes a Mott insulat
or at submonolayer Cs coverages. We also provide a consistent interpre
tation of electron-energy-loss and scanning-tunneling-spectroscopies d
ata. The correlation effects are important for this system with an est
imated correlation energy of 0.4 eV.