SILICON FUSION BONDING AND DEEP REACTIVE ION ETCHING - A NEW TECHNOLOGY FOR MICROSTRUCTURES

Citation
Eh. Klaassen et al., SILICON FUSION BONDING AND DEEP REACTIVE ION ETCHING - A NEW TECHNOLOGY FOR MICROSTRUCTURES, Sensors and actuators. A, Physical, 52(1-3), 1996, pp. 132-139
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
ISSN journal
09244247
Volume
52
Issue
1-3
Year of publication
1996
Pages
132 - 139
Database
ISI
SICI code
0924-4247(1996)52:1-3<132:SFBADR>2.0.ZU;2-V
Abstract
New developments in deep reactive ion etching (DRIE) technology, when combined with silicon fusion bonding (SFB), make it possible, for the first time, to span nearly the entire range of microstructure thicknes ses between surface and bulk micromachining, using only single-crystal silicon. The combination of these two powerful micromachining tools f orms a versatile new technology for the fabrication of micromechanical devices. The two techniques are described and a process technology is presented. Some of the experimental structures and devices that have been demonstrated using this new process technology are discussed.