TUNNELING DYNAMICS IN CDTE (CD,ZN)TE ASYMMETRIC DOUBLE-QUANTUM-WELL STRUCTURES/

Authors
HAACKE S PELEKANOS NT MARIETTE H ZIGONE M HEBERLE AP RUHLE WW
Citation
S. Haacke et al., TUNNELING DYNAMICS IN CDTE (CD,ZN)TE ASYMMETRIC DOUBLE-QUANTUM-WELL STRUCTURES/, Physical review. B, Condensed matter, 47(24), 1993, pp. 16643-16646
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
47
Issue
24
Year of publication
1993
Pages
16643 - 16646
Database
ISI
SICI code
0163-1829(1993)47:24<16643:TDIC(A>2.0.ZU;2-H
Abstract
Carrier tunneling through (Cd,Zn)Te barriers of different thicknesses is investigated in CdTe/(Cd,Zn)Te asymmetric double quantum wells by u se of time-resolved photoluminescence and steady-state photoluminescen ce excitation experiments. The strong dependence of the observed tunne ling times on the barrier thickness indicates a resonant tunneling beh avior. The analysis of our results allows us to identify the importanc e of excitons rather than free-carrier states for the tunneling mechan ism.