THE ELECTRONIC SPECIFIC-HEAT OF NARROW-GAP SEMICONDUCTORS

The electron-temperature dependence of the electronic specific heat of low-electron-concentration Hg1-xCdxTe (0.18 < x < 0.24), in magnetic fields up to 70 kOe and temperatures between 1.5 and 4.5 K, has, in th e past, been interpreted as a Schottky effect due to Wigner condensati on or else as due to electron localization in large-potential-fluctuat ion wells. The different physical models apply to different sample mat erials: pure uncompensated or highly compensated n-type Hg1-xCdxTe res pectively. The electron concentration and the degree of compensation d epend strongly on the preparation technique. n-type (intentionally or unintentionally) doped Hg1-xCdxTe is similar to n-type doped InSb, in which localization around ionized donors in high magnetic fields is a well known phenomenon.