DETERMINATION OF CONCENTRATION DEPTH PROFILES USING TOTAL-REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY IN COMBINATION WITH ION-BEAM ETCHING

Authors
GUNTHER R WIENER G KNOTH J SCHWENKE H BORMANN R
Citation
R. Gunther et al., DETERMINATION OF CONCENTRATION DEPTH PROFILES USING TOTAL-REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY IN COMBINATION WITH ION-BEAM ETCHING, Review of scientific instruments, 67(6), 1996, pp. 2332-2336
Citations number
18
Categorie Soggetti
Physics, Applied","Instument & Instrumentation
Journal title
Review of scientific instruments → ACNP
ISSN journal
00346748
Volume
67
Issue
6
Year of publication
1996
Pages
2332 - 2336
Database
ISI
SICI code
0034-6748(1996)67:6<2332:DOCDPU>2.0.ZU;2-4
Abstract
A new method for quantitative concentration depth profiling is present ed. It combines a sputter-etching technique with ex situ total-reflect ion x-ray fluorescence analysis. It allows quantitative depth-resolved analysis of alloys consisting of elements with atomic number greater than or equal to 13. Basic requirements for a high depth resolution ar e reported. With this method, an experimental depth resolution of 1.4 (+/- 0.4) nm is obtained that is comparable with the best achievable r esults from other depth profiling methods. (C) 1996 American Institute of Physics.