POROUS SILICON FABRICATION TECHNIQUE FOR LARGE-AREA DEVICES

Citation
K. Grigoras et V. Pacebutas, POROUS SILICON FABRICATION TECHNIQUE FOR LARGE-AREA DEVICES, Review of scientific instruments, 67(6), 1996, pp. 2337-2338
Citations number
6
Categorie Soggetti
Physics, Applied","Instument & Instrumentation
ISSN journal
00346748
Volume
67
Issue
6
Year of publication
1996
Pages
2337 - 2338
Database
ISI
SICI code
0034-6748(1996)67:6<2337:PSFTFL>2.0.ZU;2-Z
Abstract
An improved technique applied for fabrication of porous silicon layers on silicon wafers is proposed. The main principle is the vacuum pulli ng and holding of the sample instead of mechanical pressing or using o f special acid-proof wax. Large silicon wafers can be etched in this e lectrochemical cell. Porous silicon coating was ''deposited'' on as-pr epared solar cells. This procedure improved the cell's performance ver y significantly: we have obtained similar to 30% increase in efficienc y on cells with no antireflection coating. (C) 1996 American Institute of Physics.