HYDROGEN-RADICAL-ASSISTED RADIOFREQUENCY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SYSTEM FOR DIAMOND FORMATION

Diamond was successfully synthesized using an improved radio-frequency (rf) plasma-enhanced chemical vapor deposition system. In this system , conventional capacitively coupled parallel-plate rf (13.56 MHz) disc harge plasma was assisted by a compact microwave (2.45 GHz) H-2 plasma as a remote hydrogen radical source, and substrate heating was carrie d out using CO2 laser irradiation. Plasma control in rf discharge regi on for diamond formation was performed using the hydrogen radical sour ce in this system. This was discussed with optical emission spectrosco py. The hydrogen radical source was improved. When water vapor was mix ed to the microwave H-2 plasma, namely, using water-vapor-enhanced hyd rogen radical source, diamond films were grown at a low substrate temp erature of 450 degrees C. (C) 1996 American Institute of Physics.