X-ray reflectivity is now a common tool for investigating density prof
iles of thin films and multilayers in a nondestructive manner. In cont
rast to the specularly reflected beam the nonspecular diffuse intensit
y is sensitive to the lateral structure of rough interfaces. The most
reliable results are obtained from simultaneous fits of all available
data (i.e. reflectivity together with all diffuse scans) with a single
set of parameters. It turns out that diffuse scattering experiments f
rom a large class of systems can be described by correlation functions
of self-affine fractal surfaces. Two layer systems serve as test case
s: (1) A CoSi2/Si-layer system grown by molecular beam epitaxy (MBE) a
nd (2) Langmuir-Blodgett films. The analysis within the distorted-wave
Born approximation (DWBA) of the scattering from the silicide sample
gives a large amount of information, e.g. strong vertical correlations
. For the topmost surface a comparison between scanning tunneling micr
oscopy (STM) and X-ray results leads to very good agreement. Nine and
eleven monolayer Langmuir-Blodgett films with high defect concentratio
ns also can be successfully analyzed with the fractal model. The later
al lengths obtained from the diffuse scattering and grazing-incidence
diffraction (GID) agree.