SI CRYSTAL-GROWTH MEDIATED BY SYNCHROTRON-RADIATION-STIMULATED HYDROGEN DESORPTION

Si crystal growth on Ge(100) resulting from surface photochemical reac tion is achieved using atomic layer epitaxy, alternating disilane expo sure, and irradiation with synchrotron radiation. Self-limiting chemis orption with fractional SiH(x); coverage and partial hydrogen removal in stimulated desorption results in a constant growth rate of 0.2 ML/c ycle below thermal growth temperatures. The effects of gas and adsorba te excitation in photochemical vapor deposition are experimentally sep arated.