We present a multitechnique (scanning tunneling microscopy, photoelect
ron spectroscopy, and ion scattering spectroscopy) approach to study t
he formation of the Fe/Si(111) interface at room temperature. The firs
t-deposited Fe atoms react with the surface, displacing Si atoms from
their positions. The result is an amorphous layer with composition and
density of states close to those of FeSi. On top of this reacted laye
r, crystallites of Fe with interdiffused Si grow. Upon further Fe depo
sition, the crystallite composition evolves to pure Fe.