STRUCTURE OF DIAMOND AND DIAMOND-LIKE CARBON THIN-FILMS GROWN BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION TECHNIQUE

Citation
N. Dilawar et al., STRUCTURE OF DIAMOND AND DIAMOND-LIKE CARBON THIN-FILMS GROWN BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION TECHNIQUE, Bulletin of Materials Science, 19(3), 1996, pp. 467-473
Citations number
11
Categorie Soggetti
Material Science
ISSN journal
02504707
Volume
19
Issue
3
Year of publication
1996
Pages
467 - 473
Database
ISI
SICI code
0250-4707(1996)19:3<467:SODADC>2.0.ZU;2-X
Abstract
Micro-crystalline diamond (MCD) and diamond like carbon (DLC) thin fil ms were deposited on silicon (100) substrates by hot-filament CVD proc ess using a mixture of CH4 and H-2 gases at substrate temperature betw een 400-800 degrees C. The microstructure of the films were studied by X-ray diffraction and scanning electron microscopy. The low temperatu re deposited films were found to have a mixture of amorphous and cryst alline phases. At high temperatures (>750 degrees C) only crystalline diamond phase was obtained. Scanning electron micrographs showed facet ed microcrystals of sizes up to 2 mu m with fairly uniform size distri bution. The structure of DLC films was studied by spectroscopic ellips ometry technique. An estimate of the amount of carbon bonds existing i n sp(2) and sp(3) form was obtained by a specially developed modelling technique. The typical values of sp(3)/sp(2) ratio in our films are b etween 1.88-8.02.