PRESSURE AND TEMPERATURE-DEPENDENT DIELECTRIC-DISPERSION IN BI12GEO20(100) SINGLE-CRYSTALS

Citation
Kk. Jain et Sc. Kashyap, PRESSURE AND TEMPERATURE-DEPENDENT DIELECTRIC-DISPERSION IN BI12GEO20(100) SINGLE-CRYSTALS, Bulletin of Materials Science, 19(3), 1996, pp. 533-537
Citations number
12
Categorie Soggetti
Material Science
ISSN journal
02504707
Volume
19
Issue
3
Year of publication
1996
Pages
533 - 537
Database
ISI
SICI code
0250-4707(1996)19:3<533:PATDIB>2.0.ZU;2-Q
Abstract
Bismuth germanium oxide (EGO) has tremendous application potential due to its favourable electro-mechanical and electro-optic properties. Th e present paper describes some of our preliminary results on the varia tion of dielectric constant with applied high hydrostatic pressure and temperature. It is noted that EGO is a promising candidate for its ap plication as a pressure sensor.