THE MAKING AND CHARACTERIZATION OF A SCHO TTKY-BARRIER USING NITI SHAPE-MEMORY ALLOY AS RECTIFYING CONTACT

Authors
BENDAHAN M SEGUIN JL CARCHANO H
Citation
M. Bendahan et al., THE MAKING AND CHARACTERIZATION OF A SCHO TTKY-BARRIER USING NITI SHAPE-MEMORY ALLOY AS RECTIFYING CONTACT, Comptes rendus de l'Academie des sciences. Serie II. Mecanique, physique, chimie, astronomie, 322(10), 1996, pp. 747-753
Citations number
15
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Comptes rendus de l'Academie des sciences. Serie II. Mecanique, physique, chimie, astronomie → ACNP
ISSN journal
12518069
Volume
322
Issue
10
Year of publication
1996
Pages
747 - 753
Database
ISI
SICI code
1251-8069(1996)322:10<747:TMACOA>2.0.ZU;2-Y
Abstract
With the aim of studying the feasibility of sensors using NiTi films, we made NiTi/Si(n) structures. NiTi films were deposited by r.f. sputt ering on silicon substrates heated at 150 degrees C. I(V) measurements show that the NiTi/Si contact has a rectifying behaviour. The barrier height was found to be 0.64 eV for a NiTi film containing 49% of Ni. Electrical measurements, at different temperatures, have shown a pecul iar behaviour of the NiTi/Si diode. This phenomenon seems to be due to the phase transformation of the NiTi electrode.