M. Bendahan et al., THE MAKING AND CHARACTERIZATION OF A SCHO TTKY-BARRIER USING NITI SHAPE-MEMORY ALLOY AS RECTIFYING CONTACT, Comptes rendus de l'Academie des sciences. Serie II. Mecanique, physique, chimie, astronomie, 322(10), 1996, pp. 747-753
With the aim of studying the feasibility of sensors using NiTi films,
we made NiTi/Si(n) structures. NiTi films were deposited by r.f. sputt
ering on silicon substrates heated at 150 degrees C. I(V) measurements
show that the NiTi/Si contact has a rectifying behaviour. The barrier
height was found to be 0.64 eV for a NiTi film containing 49% of Ni.
Electrical measurements, at different temperatures, have shown a pecul
iar behaviour of the NiTi/Si diode. This phenomenon seems to be due to
the phase transformation of the NiTi electrode.