DOUBLE RESURF TECHNOLOGY FOR HVICS

Authors
DESOUZA MM NARAYANAN EMS
Citation
Mm. Desouza et Ems. Narayanan, DOUBLE RESURF TECHNOLOGY FOR HVICS, Electronics Letters, 32(12), 1996, pp. 1092-1093
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
12
Year of publication
1996
Pages
1092 - 1093
Database
ISI
SICI code
0013-5194(1996)32:12<1092:DRTFH>2.0.ZU;2-U
Abstract
A double resurf high voltage IC technology using a linearly varying do ped (LVD) p(-) layer al the surface of a lateral power device is propo sed. Detailed numerical simulations indicate enhancement in the perfor mance of a lateral double diffused MOSFET (LDMOS) incorporating an LVD p(-) layer in comparison to a uniform p(-) layer. Moreover, this tech nique is found to very effective as an interconnection technology.