SIMPLE BACKGATED MOSFET STRUCTURE FOR DYNAMIC THRESHOLD CONTROL IN FULLY DEPLETED SOI CMOS

Authors
TARR NG SOREEFAN R MACELWEE TW SNELGROVE WM BAZARJANI S
Citation
Ng. Tarr et al., SIMPLE BACKGATED MOSFET STRUCTURE FOR DYNAMIC THRESHOLD CONTROL IN FULLY DEPLETED SOI CMOS, Electronics Letters, 32(12), 1996, pp. 1093-1095
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
12
Year of publication
1996
Pages
1093 - 1095
Database
ISI
SICI code
0013-5194(1996)32:12<1093:SBMSFD>2.0.ZU;2-C
Abstract
A simple junction-isolated backgate electrode, formed by boron implant ation through the buried oxide, is shown to provide effective dynamic control of device thresholds in fully depleted SOI CMOS for similar or equal to 1V power supply operation.