1.3-MU-M LASER-DIODES WITH BUTT-JOINTED SELECTIVELY GROWN SPOT-SIZE CONVERTERS UNIFORMLY FABRICATED ON A 2IN INP SUBSTRATE

Authors
OKAMOTO H SUZAKI Y TOHMORI Y OKAMOTO M KONDO Y KADOTA Y YAMAMOTO M KISHI K SAKAI Y WADA M NAKAO M ITAYA Y
Citation
H. Okamoto et al., 1.3-MU-M LASER-DIODES WITH BUTT-JOINTED SELECTIVELY GROWN SPOT-SIZE CONVERTERS UNIFORMLY FABRICATED ON A 2IN INP SUBSTRATE, Electronics Letters, 32(12), 1996, pp. 1099-1101
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
12
Year of publication
1996
Pages
1099 - 1101
Database
ISI
SICI code
0013-5194(1996)32:12<1099:1LWBSG>2.0.ZU;2-M
Abstract
1.3 mu m laser diodes with butt-jointed selectively grown spot-size co nverters have been successfully fabricated on a 2in InP substrate. The ir threshold current and far-field patterns were uniformly distributed over the 2in wafer. These uniform characteristics were obtained by co mbining uniform MOVPE growth, wet etching, and CH4/H-2 reactive ion et ching.