SHORTEST WAVELENGTH SEMICONDUCTOR-LASER DIODE

Authors
AKASAKI I SOTA S SAKAI H TANAKA T KOIKE M AMANO H
Citation
I. Akasaki et al., SHORTEST WAVELENGTH SEMICONDUCTOR-LASER DIODE, Electronics Letters, 32(12), 1996, pp. 1105-1106
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
12
Year of publication
1996
Pages
1105 - 1106
Database
ISI
SICI code
0013-5194(1996)32:12<1105:SWSD>2.0.ZU;2-T
Abstract
A group III, nitride based, separate confinement heterostructure (SCH) single quantum well (SQW) structure, with an active layer thickness a s small as 1.5nm, was fabricated. It shows the shortest lasing from se miconductor lasers by current injection at room temperature to date. L ine width is as little as 0.15nm.