SILICON MOSFET DISTRIBUTED-AMPLIFIER

The first reported integrated silicon MOSFET distributed amplifier is presented. A three stage distributed amplifier was fabricated on a sta ndard 0.8 mu m silicon CMOS foundry process and packaged in a SSO-24 p lastic surface mount package. The required inductance needed for distr ibuted amplification is realised by the parasitic inductance of the bo nd wires and lead frame inductance inside the plastic surface mount pa ckage. The distributed amplifier has a unity gain cutoff frequency of 4.7GHz, a gain of 5dB and an input referred third order intercept poin t of +15dBm.