DESIGN AND REALIZATION OF WAVE-GUIDE INTEGRATED ALINAS GAINAS HEMTS REGROWN BY MBE FOR HIGH BIT-RATE OPTOELECTRONIC RECEIVERS ON INP/

Authors
SCHRAMM C SCHLAAK W MEKONNEN GG PASSENBERG W UMBACH A SEEGER A WOLFRAM P BACH HG
Citation
C. Schramm et al., DESIGN AND REALIZATION OF WAVE-GUIDE INTEGRATED ALINAS GAINAS HEMTS REGROWN BY MBE FOR HIGH BIT-RATE OPTOELECTRONIC RECEIVERS ON INP/, Electronics Letters, 32(12), 1996, pp. 1139-1141
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
12
Year of publication
1996
Pages
1139 - 1141
Database
ISI
SICI code
0013-5194(1996)32:12<1139:DAROWI>2.0.ZU;2-G
Abstract
The successful fabrication of AlInAs/GaInAs HEMTs, regrown by MBE on p atterned optical waveguide surfaces after the local removal of a previ ously grown photodiode layer stack, is reported. The devices are part of a distributed amplifier within an integrated optoelectronic receive r intended to operate at a 1.55 mu m wavelength and at bit rates of 20 and/or 40Gbit/s. The performance of the HEMTs is highly comparable to reference devices grown on planar surfaces.