SILICON-CARBIDE ON INSULATOR FORMATION USING THE SMART CUT PROCESS

Authors
DICIOCCIO L LETIEC Y LETERTRE F JAUSSAUD C BRUEL M
Citation
L. Dicioccio et al., SILICON-CARBIDE ON INSULATOR FORMATION USING THE SMART CUT PROCESS, Electronics Letters, 32(12), 1996, pp. 1144-1145
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
12
Year of publication
1996
Pages
1144 - 1145
Database
ISI
SICI code
0013-5194(1996)32:12<1144:SOIFUT>2.0.ZU;2-3
Abstract
The Smart Cut process [1, 2] has been applied for the first time td Si C, in order to form silicon carbide on insulator (SiCOI) structures. T hese structures have been formed on polycrystalline SiC and on silicon substrates.