AUGER RECOMBINATION WITH TRAPS IN QUANTUM-WELL SEMICONDUCTORS

Authors
HAUG A
Citation
A. Haug, AUGER RECOMBINATION WITH TRAPS IN QUANTUM-WELL SEMICONDUCTORS, Applied physics. A, Solids and surfaces, 56(6), 1993, pp. 567-569
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics. A, Solids and surfaces → ACNP
ISSN journal
07217250
Volume
56
Issue
6
Year of publication
1993
Pages
567 - 569
Database
ISI
SICI code
0721-7250(1993)56:6<567:ARWTIQ>2.0.ZU;2-#
Abstract
Auger recombination involving traps is calculated for quantum-well sem iconductors. Apart from some modifications the results are analogous t o those for bulk semiconductors. In particular, the lifetime of the re combination process is proportional to the inverse carrier density and independent of temperature.