COMPUTER-SIMULATION OF THE INTERACTION BETWEEN AN EXTENDED DISLOCATION AND RADIATION DEFECTS IN THE FCC LATTICE

The interaction between an extended dislocation and a radiation-induce d defect, especially a self-intersistial atom (SIA), has been investig ated in the model fcc lattice by computer simulation technique. An SIA was absorbed into the core of one of the two partial dislocations of the extended screw dislocation as a crowdion which extends along the d islocation line. Under the applied shear stress this crowdion acted as a pinning point, resulting in irradiation hardening. On the other han d, an SIA was absorbed at the jog site of the extended edge dislocatio n (at one of the two jog sites on two partial dislocations) and after some relaxation the total jog was shifted to one atomic distance throu gh the spreading out of the strain due to an SIA from one partial side to the other side.