In. Mihailescu et al., LASER-ABLATION IN A REACTIVE ATMOSPHERE - APPLICATION TO THE SYNTHESIS AND DEPOSITION PERFORMANCE OF TITANIUM CARBIDE THIN-FILMS, Optical engineering, 35(6), 1996, pp. 1652-1655
We report the synthesis and deposition of Ti carbide thin layers by mu
ltipulse excimer laser ablation of Ti targets in CH4 at low ambient pr
essure (in the microbar range). The layers deposited on single-crystal
line Si wafers are characterized by optical microscopy, scanning elect
ron microscopy, x-ray diffraction, photoelectron spectroscopy, and spe
ctroscopic ellipsometry. We obtained deposition rates in the range 0.2
to 0.3 Angstrom pulse for a target-collector separation distance of 1
2.5 mm. The deposition parameters were found to be in good agreement w
ith the predictions of the theoretical model based on the assumption o
f the adiabatic expansion of the plasma in the ambient gas. (C) 1996 S
ociety of Photo-Optical Instrumentation Engineers.