K. Kashihara et al., RECRYSTALLIZATION BEHAVIOR AT DEFORMATION BANDS IN [011]ALUMINUM SINGLE-CRYSTALS, Materials transactions, JIM, 37(4), 1996, pp. 572-578
Changes of recrystallization behavior at the special type of band of s
econdary slip, which the authors call ''SBSS'', were investigated for
[011] aluminum single crystals deformed in tension to 30 and 70% strai
ns. At 30% strain, recrystallized grains (RGs) were formed along the S
BSSs. They had relationships of [111] rotations or unknown orientation
s to the deformed matrix (DM) or SBSS. At 70%, in addition to the form
ation of RGs with the above relationships, recrystallized areas were n
ewly formed due to the strain induced boundary migration (SIBM). At bo
th 30 and 70% strains, the RGs characterized by the [111] rotations do
not indicate any specific angle relationship, for example, the 40 deg
rees [111] rotation to DM. The ''secondary deformation bands'' (SDBs),
which were formed at the wavy pseudo-boundaries (WPBs) at 70% strain,
contribute to the formation of recrystallized areas due to the SIBM.
A mechanism of orientation selectivity of recrystallized structure wit
h increasing strain is discussed.