RECRYSTALLIZATION BEHAVIOR AT DEFORMATION BANDS IN [011]ALUMINUM SINGLE-CRYSTALS

Citation
K. Kashihara et al., RECRYSTALLIZATION BEHAVIOR AT DEFORMATION BANDS IN [011]ALUMINUM SINGLE-CRYSTALS, Materials transactions, JIM, 37(4), 1996, pp. 572-578
Citations number
21
Categorie Soggetti
Metallurgy & Metallurigical Engineering","Material Science
Journal title
ISSN journal
09161821
Volume
37
Issue
4
Year of publication
1996
Pages
572 - 578
Database
ISI
SICI code
0916-1821(1996)37:4<572:RBADBI>2.0.ZU;2-K
Abstract
Changes of recrystallization behavior at the special type of band of s econdary slip, which the authors call ''SBSS'', were investigated for [011] aluminum single crystals deformed in tension to 30 and 70% strai ns. At 30% strain, recrystallized grains (RGs) were formed along the S BSSs. They had relationships of [111] rotations or unknown orientation s to the deformed matrix (DM) or SBSS. At 70%, in addition to the form ation of RGs with the above relationships, recrystallized areas were n ewly formed due to the strain induced boundary migration (SIBM). At bo th 30 and 70% strains, the RGs characterized by the [111] rotations do not indicate any specific angle relationship, for example, the 40 deg rees [111] rotation to DM. The ''secondary deformation bands'' (SDBs), which were formed at the wavy pseudo-boundaries (WPBs) at 70% strain, contribute to the formation of recrystallized areas due to the SIBM. A mechanism of orientation selectivity of recrystallized structure wit h increasing strain is discussed.