FAST PHOTOLUMINESCENCE DECAY AND OPTICAL NONLINEARITY OF A ZNCDSE ZNSE MULTIPLE-QUANTUM-WELL AROUND AN EXCITONIC PEAK/

Fast photoluminescence decay in a ZnCdSe/ZnSe multiple quantum well (M QW) has been measured at room temperature (RT) and 77 K. The decay tim es are typically 70 ps at RT and 160 ps at 77 K, which are much shorte r than those of III-V semiconductors. The decay time is changed by the doping of the MQW layers, which could be related to the increase in t raps. Strong laser-light irradiation also results in shorter decay tim es, indicating degradation induced by the excitation. Absorptive and n on-absorptive nonlinear optical properties of the II-VI MQW have also been measured to compare them with those of III-V semiconductors.