DOUBLE-LAYER CAPACITANCE ON A ROUGH METAL-SURFACE

Citation
Li. Daikhin et al., DOUBLE-LAYER CAPACITANCE ON A ROUGH METAL-SURFACE, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics, 53(6), 1996, pp. 6192-6199
Citations number
51
Categorie Soggetti
Physycs, Mathematical","Phsycs, Fluid & Plasmas
ISSN journal
1063651X
Volume
53
Issue
6
Year of publication
1996
Part
B
Pages
6192 - 6199
Database
ISI
SICI code
1063-651X(1996)53:6<6192:DCOARM>2.0.ZU;2-4
Abstract
An expression for the double layer capacitance of rough metal-electrol yte, metal-semiconductor, or semiconductor-electrolyte interfaces is d erived which shows the interplay between the Debye length and the leng ths characterizing roughness. Different dependencies of the capacitanc e, as compared to the flat interface, on the concentration of charge c arriers in electrolyte or semiconductor are predicted. Examples of the typical roughness spectra are considered. The cases of Euclidean roug hness show weak dependence on the particular form of the roughness spe ctrum, being sensitive only to its main parameters: the random mean sq uare height of roughness and correlation length. A method is proposed for the in situ characterization of surface roughness: the measurement of surface roughness with a ''Debye ruler,'' based on the conventiona l measurements of the double layer capacitance.