SOME ANNEALING EFFECTS ON RF-SPUTTERED CU TE/CDTE STRUCTURE/

Authors
DEBBAGH F AMEZIANE EL AZIZAN M BRUNEL M NGUYEN TTA
Citation
F. Debbagh et al., SOME ANNEALING EFFECTS ON RF-SPUTTERED CU TE/CDTE STRUCTURE/, Materials science & engineering. B, Solid-state materials for advanced technology, 38(3), 1996, pp. 223-227
Citations number
25
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
38
Issue
3
Year of publication
1996
Pages
223 - 227
Database
ISI
SICI code
0921-5107(1996)38:3<223:SAEORC>2.0.ZU;2-D
Abstract
Cu/Te/CdTe multilayers prepared entirely by r.f. sputtering on silicon substrates are investigated using grazing incidence X-ray diffraction (GIXD) and X-ray photoelectron spectroscopy (XPS) techniques. Migrati on of cadmium atoms from the CdTe layer to the free surface is observe d when the films are annealed at 450 K. This migration is accompanied by the diffusion of copper and tellurium into the CdTe layer, leading to segregation of these two elements at the CdTe/Si interface.