CHARACTERIZATION OF OXYGEN IMPURITY CONCENTRATION IN SILICON-BASED ONTHERMAL EMISSION MEASUREMENTS

Authors
MALYUTENKO VK CHERNYAKOVSKY VI PIOTROWSKI T
Citation
Vk. Malyutenko et al., CHARACTERIZATION OF OXYGEN IMPURITY CONCENTRATION IN SILICON-BASED ONTHERMAL EMISSION MEASUREMENTS, Infrared physics & technology, 37(4), 1996, pp. 499-504
Citations number
13
Categorie Soggetti
Optics,"Physics, Applied
Journal title
Infrared physics & technology → ACNP
ISSN journal
13504495
Volume
37
Issue
4
Year of publication
1996
Pages
499 - 504
Database
ISI
SICI code
1350-4495(1996)37:4<499:COOICI>2.0.ZU;2-T
Abstract
Measurements of thermal emission power of silicon in the spectral band at lambda = 9.05 mu m are used for determination of the interstitial oxygen concentration and its distribution in silicon wafers. The calib ration curves for the wafers with fixed thickness are shown. A compari son to the traditional absorption method is given.