Zm. Zhang et al., POLARIZATION-DEPENDENT ANGULAR REFLECTANCE OF SILICON AND GERMANIUM IN THE INFRARED, Infrared physics & technology, 37(4), 1996, pp. 539-546
We have investigated the reflectance of crystalline silicon and german
ium samples for infrared radiation polarized parallel and perpendicula
r to the plane of incidence. A Fourier transform infrared (FT-IR) spec
trometer was employed to measure the specular reflectance at angles of
incidence from 20 degrees to 60 degrees in the wavelength range betwe
en 2 mu m and 25 mu m The measurements agree with the theoretical anal
ysis to within the experimental uncertainty. At large angles of incide
nce, the reflectance depends strongly on polarization. Since the beam
in a spectrometer generally exhibits partial polarization, the measure
d reflectance without a polarizer may differ from the average reflecta
nce for the two polarization states. This work demonstrates that silic
on and germanium can be used as standard reference materials for specu
lar reflectance in the mid-infrared region.