EMPIRICAL TIGHT-BINDING TOTAL ELECTRONIC-ENERGY CALCULATION FOR SINH2M (N = 1 TO 6, M = 1 TO 3) CLUSTERS

Citation
S. Katircioglu et S. Erkoc, EMPIRICAL TIGHT-BINDING TOTAL ELECTRONIC-ENERGY CALCULATION FOR SINH2M (N = 1 TO 6, M = 1 TO 3) CLUSTERS, Physica status solidi. b, Basic research, 177(2), 1993, pp. 373-378
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
177
Issue
2
Year of publication
1993
Pages
373 - 378
Database
ISI
SICI code
0370-1972(1993)177:2<373:ETTECF>2.0.ZU;2-6
Abstract
The stable structures of SinH2m (n = 1 to 6, m = 1 to 3) clusters are investigated by the total electronic energy calculation using an empir ical tight-binding (ETB) method. It seems that bridged H-bond models a re also possible for small Si(n)H(m) clusters.