THE W DEFECT IN N-TYPE INP

The W defect in n-type InP-based Schottky diodes irradiated with elect rons is investigated. The defect is produced only in the space charge region and is a trap for five electrons. Two configurations were found for the defect: one configuration (A) manifests the properties of a c enter with a negative correlation energy. The transformation of the A configuration into a metastable B configuration is controlled by the l oss of two electrons. It is suggested that a W defect in the B configu ration consists of two fragments on which one and two electrons, respe ctively, are localized. (C) 1996 American Institute of Physics.