SEMICONDUCTOR AMPLIFIERS AND LASERS WITH TAPERED GAIN REGIONS

Authors
WALPOLE JN
Citation
Jn. Walpole, SEMICONDUCTOR AMPLIFIERS AND LASERS WITH TAPERED GAIN REGIONS, Optical and quantum electronics, 28(6), 1996, pp. 623-645
Citations number
95
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Optical and quantum electronics → ACNP
ISSN journal
03068919
Volume
28
Issue
6
Year of publication
1996
Pages
623 - 645
Database
ISI
SICI code
0306-8919(1996)28:6<623:SAALWT>2.0.ZU;2-N
Abstract
Semiconductor amplifiers and lasers with tapered gain regions provide the highest-brightness all-semiconductor sources of near infrared cont inuous wave (CW) power and have many useful applications. Simple model s of these devices are described. Their applications, device performan ce and brightness limitations are reviewed.