THERMAL ANNEALING OF SI-VAPOR-DEPOSITION SIO2( IMPLANTED CHEMICAL)

Authors
ZHENG XQ LIAO LS YAN F BAO XM WANG W
Citation
Xq. Zheng et al., THERMAL ANNEALING OF SI-VAPOR-DEPOSITION SIO2( IMPLANTED CHEMICAL), Chinese Physics Letters, 13(5), 1996, pp. 397-400
Citations number
9
Categorie Soggetti
Physics
Journal title
Chinese Physics Letters → ACNP
ISSN journal
0256307X
Volume
13
Issue
5
Year of publication
1996
Pages
397 - 400
Database
ISI
SICI code
0256-307X(1996)13:5<397:TAOSSI>2.0.ZU;2-S
Abstract
ion implantation was used to bring silicon atoms into chemical vapor d eposition SiO2. Two bands of photoluminescence spectra at about 540 an d 640 nm were observed from the as-prepared samples. Thermal annealing behavior of the photoluminescence was studied. The possible origin of the photoluminescence is discussed.