REVERSIBLE POSITIVE CHARGE ANNEALING IN MOS-TRANSISTOR DURING VARIETYOF ELECTRICAL AND THERMAL-STRESSES

Authors
EMELIANOV VV ZEBREV GI ULIMOV VN USEINOV RG BELYAKOV VV PERSHENKOV VS
Citation
Vv. Emelianov et al., REVERSIBLE POSITIVE CHARGE ANNEALING IN MOS-TRANSISTOR DURING VARIETYOF ELECTRICAL AND THERMAL-STRESSES, IEEE transactions on nuclear science, 43(3), 1996, pp. 805-809
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
3
Year of publication
1996
Part
1
Pages
805 - 809
Database
ISI
SICI code
0018-9499(1996)43:3<805:RPCAIM>2.0.ZU;2-T
Abstract
The postirradiation response of n-channel. MOSTs during thermal and el ectrical stresses is investigated. It is found that reversible positiv e charge annealing plays a key role in the postirradiation response of MOST. Mathematical model of reversible charge relaxation process is s uggested.