X-RADIATION RESPONSE OF SIMOX BURIED OXIDES - INFLUENCE OF THE FABRICATION PROCESS

X-ray induced electron and hole trapping properties have been investig ated in SIMOX buried oxides of different processes, including standard and supplemental implantation oxides, as well as new thin and ultra-t hin oxides. The effect of the substrate bias applied during irradiatio n is studied, and then used to extract both hole and electron trapping parameters The results demonstate that varying the oxygen implantatio n conditions has very little effect on the radiation induced behavior of the material. They show that the charge trapping properties of the buried oxide are related to the ultra high temperature anneal performe d on the confined oxide layer, and confirm that the post implantation anneal is the most critical pant of the SIMOX process.