POSTIRRADIATION EFFECTS IN A RAD-HARD TECHNOLOGY

Authors
CHABRERIE C MUSSEAU O FLAMENT O LERAY JL BOUDENOT JC SHIPMAN B CALLEWAERT H
Citation
C. Chabrerie et al., POSTIRRADIATION EFFECTS IN A RAD-HARD TECHNOLOGY, IEEE transactions on nuclear science, 43(3), 1996, pp. 826-830
Citations number
22
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
3
Year of publication
1996
Part
1
Pages
826 - 830
Database
ISI
SICI code
0018-9499(1996)43:3<826:PEIART>2.0.ZU;2-L
Abstract
We studied radiation and post-irradiation effects in a CMOS rad-hard t echnology. The physical properties of charge detrapping in the gate ox ide, investigated by isothermal and isochronal annealings, are depende nt on the experimental procedure (bias, time storage, temperature, dos e level).