THE USE OF CHARGE-PUMPING FOR CHARACTERIZING IRRADIATED POWER MOSFETS

Authors
PREVOST G AUGIER P PALAU JM
Citation
G. Prevost et al., THE USE OF CHARGE-PUMPING FOR CHARACTERIZING IRRADIATED POWER MOSFETS, IEEE transactions on nuclear science, 43(3), 1996, pp. 858-864
Citations number
12
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
3
Year of publication
1996
Part
1
Pages
858 - 864
Database
ISI
SICI code
0018-9499(1996)43:3<858:TUOCFC>2.0.ZU;2-9
Abstract
A charge-pumping technique is proposed for characterizing radiation-in duced interface traps in vertical power MOSFETs. An original setup all owing measurements on these 3-contact devices is presented. The first experimental results before and after irradiation are discussed.