ANALYSIS OF LOCAL AND GLOBAL TRANSIENT EFFECTS IN A CMOS SRAM

Authors
GARDIC F MUSSEAU O FLAMENT O BRISSET C FERLETCAVROIS V MARTINEZ M CORBIERE T
Citation
F. Gardic et al., ANALYSIS OF LOCAL AND GLOBAL TRANSIENT EFFECTS IN A CMOS SRAM, IEEE transactions on nuclear science, 43(3), 1996, pp. 899-906
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
3
Year of publication
1996
Part
1
Pages
899 - 906
Database
ISI
SICI code
0018-9499(1996)43:3<899:AOLAGT>2.0.ZU;2-R
Abstract
We have studied the sensitivity of a 256 kbit CMOS/epi SRAM to transie nt phenomena (protons and ions SEU, dose rate). Local and global failu re mechanisms are observed and discussed. For single particles, or at low dose rate, cell upsets are uncorrelated. When the dose rate is inc reased, correlated failures are due to both cell photocurrent summatio n (rail span collapse) and supply voltage drop in pheripheral circuits . The transition between uncorrelated to correlated failures is interp reted, on the basis of device structure and pattern influence.