SINGLE EVENT DAMAGE EFFECTS IN CRYOGENIC CMOS MICROELECTRONICS

Authors
PICKEL JC
Citation
Jc. Pickel, SINGLE EVENT DAMAGE EFFECTS IN CRYOGENIC CMOS MICROELECTRONICS, IEEE transactions on nuclear science, 43(3), 1996, pp. 912-917
Citations number
7
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
3
Year of publication
1996
Part
1
Pages
912 - 917
Database
ISI
SICI code
0018-9499(1996)43:3<912:SEDEIC>2.0.ZU;2-3
Abstract
Cryogenic microelectronics, as used in focal plane arrays in space-bas ed optical sensors, are potentially vulnerable to single event damage effects from energetic heavy ions and protons. Results are presented f or numerical simulation and analytical assessment of potential effects in generic FPAs. Present-generation FPAs are not likely to be affecte d by single event damage, but the potential will increase as minimum t ransistor size is made smaller.