INTERPRETATION OF HEAVY-ION CROSS-SECTION MEASUREMENTS

This paper discusses the information about a device that is contained in the experimental heavy ion cross section curve. The width and shape of the curve are shown to be determined by intra-cell variations of c harge collection, not by cell to cell variations. If we assume that th ere is a unique charge that must appear on the transistor terminal, th en the cross section may be described in terms of variation of effecti ve charge collection depth across the device. Contours of constant cha rge collection can be determined from the parameters that describe the cross section curve. The effects of diffusion can be distinguished fr om the other charge collection processes.