DYNAMIC SINGLE EVENT EFFECTS IN A CMOS THICK SOI SHIFT REGISTER/

Authors
GARDIC F FLAMENT O MUSSEAU O BRISSET C MARTINEZ M BRUNET JP BLANQUART L
Citation
F. Gardic et al., DYNAMIC SINGLE EVENT EFFECTS IN A CMOS THICK SOI SHIFT REGISTER/, IEEE transactions on nuclear science, 43(3), 1996, pp. 960-966
Citations number
8
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
3
Year of publication
1996
Part
1
Pages
960 - 966
Database
ISI
SICI code
0018-9499(1996)43:3<960:DSEEIA>2.0.ZU;2-5
Abstract
We describe transient effects induced by high energy protons in shift registers processed in a CMOS/thick SOI technology. Devices are tested in dynamic mode. The dependence of cross section on frequency, signal rise time, angle of incidence and proton energy is studied and interp reted.