INVESTIGATION OF ON-CHIP HIGH-TEMPERATURE ANNEALING OF PMOS DOSIMETERS

Radiation sensitive pMOS dosimeters can measure only to a maximum dose which is determined by the type, sensitivity and irradiation conditio ns of the RADFET. On reaching the maximum dose, the dosimeters normall y have to be replaced. The aim of this work is to study the feasibilit y of using on-chip poly-resistor heaters to anneal the dosimeters back to their pre-irradiation threshold voltage. This study shows that on- chip heating is a viable option to achieve post-irradiation annealing, and that the fading characteristics obtained agree with those of oven annealing from a previous study which was carried out on the NMRC RAD FETs.