AVALANCHE SEMICONDUCTOR RADIATION DETECTORS

Authors
SADYGOV ZY ZHELEZNYKH IM MALAKHOV NA JEJER VN KIRILLOVA TA
Citation
Zy. Sadygov et al., AVALANCHE SEMICONDUCTOR RADIATION DETECTORS, IEEE transactions on nuclear science, 43(3), 1996, pp. 1009-1013
Citations number
6
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
3
Year of publication
1996
Part
1
Pages
1009 - 1013
Database
ISI
SICI code
0018-9499(1996)43:3<1009:ASRD>2.0.ZU;2-F
Abstract
Operation of novel avalanche semiconductor detector, produced on the b asis of heterojunctions Si - SiC and Si - SixOy is described. A unifor m avalanche process with gain from 10(3) to 10(5) can be reached depen ding on the conductivity of. SiC and SixOy layers. Two types of avalan che photodetectors designed for applications in wavelength range 500 - 1000 nm with quantum efficiency 60 +/- 10 % (650nm) and 200 - 700 mn with quantum efficiency 60 +/- 15 % (450nm) are presented.