IRRADIATION TESTS OF DOUBLE-SIDED SILICON STRIP DETECTORS WITH A SPECIAL GUARD RING STRUCTURE

Authors
ABT I ANDRICEK L BAUER C FOX H HALLEY A KROHA H RICHTER RH RIECHMANN K RIETZ M RUBSAM R SEYWERD H STDENIS R BAUMANN I KNOPFLE KT
Citation
I. Abt et al., IRRADIATION TESTS OF DOUBLE-SIDED SILICON STRIP DETECTORS WITH A SPECIAL GUARD RING STRUCTURE, IEEE transactions on nuclear science, 43(3), 1996, pp. 1113-1118
Citations number
19
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
3
Year of publication
1996
Part
2
Pages
1113 - 1118
Database
ISI
SICI code
0018-9499(1996)43:3<1113:ITODSS>2.0.ZU;2-8
Abstract
The results of the first irradiation tests of newly designed silicon m icrostrip detectors pel formed with 21 MeV protons at the Max-Planck-I nstitut in Heidelberg are presented. The detectors were developed and produced by the semiconductor laboratory of the Max-Planck-Institut in Munich. Novel guard ring structures allow operation of the detectors at voltages exceeding 300 V.