FABRICATION OF A DOUBLE-SIDED SILICON MICROSTRIP DETECTOR WITH AN ONOCAPACITOR DIELECTRIC FILM

Authors
SAITOH Y AKAMINE T INOUE M YAMANAKA J KADOI K TAKANO R KOJIMA Y MIYAHARA S KAMIYA M IKEDA H MATSUDA T TSUBOYAMA T OZAKI H TANAKA M IWASAKI H HABA J HIGASHI Y YAMADA Y OKUNO S AVRILLON S NEMOTO T FUKUNISHI I ASANO Y
Citation
Y. Saitoh et al., FABRICATION OF A DOUBLE-SIDED SILICON MICROSTRIP DETECTOR WITH AN ONOCAPACITOR DIELECTRIC FILM, IEEE transactions on nuclear science, 43(3), 1996, pp. 1123-1129
Citations number
13
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
3
Year of publication
1996
Part
2
Pages
1123 - 1129
Database
ISI
SICI code
0018-9499(1996)43:3<1123:FOADSM>2.0.ZU;2-I
Abstract
Double-sided silicon microstrip detectors (DSSDs) with integrated coup ling capacitors formed by an oxide-nitride-oxide (ONO) dielectric film were fabricated using newly developed processing techniques. We repor t on the processing techniques and some characteristics of the detecto rs fabricated in the above process.